20. (4pts) Find the base current, IB. Show your work.   Show your work on paper – no need to submit an answer here.

11. (2pts) Find the transconductance, gm. Show your work and include units.  Show your work on paper – no need to submit an answer here.  

26. In a Common Emitter (CE) amplifier, the purpose of the emitter resistor, RE (without a bypass capacitor) is to:

30. (8pts) For the matched case, find the values of VOH, VOL, VIH, and VIL for this inverter. Show your work and include units.   Show your work on paper – no need to submit an answer here.  

29. (2pts) Find the width of the PMOS, Wp, so that the NMOS and PMOS devices are “matched” (i.e. VM = VDD/2 for the inverter). Show your work and include units.   Show your work on paper – no need to submit an answer here.

CMOS Inverter (16pts) Consider a CMOS inverter fabricated in a 65-nm CMOS process with the following parameters: Use this information to answer questions 29-31. Include proper units for full credit and show your work.  Unless otherwise specified and if appropriate, give an equation and a number answer.

17. (2pts) Which MOSFET amplifier type is best for voltage amplification?

25. (6pts) What are the values of the small signal variables gm, rπ, and re? Show your work and include units.   Show your work on paper – no need to submit an answer here.  

15. (4pts) Find the overall small-signal voltage gain from vi to vo (excluding Rsig). Show your work and include units.   Show your work on paper – no need to submit an answer here.

18. (2pts) In a MOSFET amplifier operating in the active region, the small-signal output resistance, ro, is primarily due to: