THIS CONTENT IS PROTECTED AND MAY NOT BE SHARED, UPLOADED, S…

THIS CONTENT IS PROTECTED AND MAY NOT BE SHARED, UPLOADED, SOLD, OR DISTRIBUTED For the same doping concentrations NA and ND in a pn junction diode, will the built in potential Vbi be smaller / lower in Gallium Nitride (GaN) with bandgap 3.4 eV or AlN with bandgap = 6.3 eV? Why?  (3 points)