How does the MPOA interact with hormones to influence sexual identity and expression?

For this multi-part free response question, write down your answer on blank papers.  You have 10 minutes after you have completed this Honorlock exam to scan your handwritten answer (or take photos) and upload into Canvas (responding to the assignment “Exam 2 Supplement”). Make sure you label the individual parts clearly. FRQ#5: MOSFETs (8 points) (1) Schematically draw the cross-section structure of a p-channel MOSFET, label all three electrodes (source, drain, and gate) and the oxide and semiconductor (including the doping types), and indicate the location of the conducting channel.  (4 points) (2) For a MOSFET built on an n-type Si semiconductor in which the Fermi energy is 0.3 eV away from the nearest band edge, where is the Fermi energy position (relative to the band edges) on the surface of the semiconductor when the MOSFET is just turned on (i.e. the gate voltage equals the threshold voltage of the MOSFET)? Use 1.1 eV for the bandgap of Si. (4 points)

When a MOSFET is operated in the saturation region of its output characteristics, the drain-source current does not depend on the drain-source voltage, but it can be tuned by adjusting the gate voltage.

For this multi-part free response question, please write down your answer on blank papers.  You have 10 minutes after you have completed this Honorlock exam to scan your handwritten answer (or take photos) and upload into Canvas (responding to the assignment “Exam 2 Supplement”). Make sure you label the individual parts clearly. FRQ#2. Intrinsic and extrinsic semiconductors (19 points) A Si crystal is doped with 5×1016 aluminum atoms per cubic centimeter.  At T = 300 K, the bandgap of Si is E­g = 1.12 eV, the intrinsic carrier concentration is ni = 1.0×1010 cm-3, and the effective densities of states of the conduction band and valence band are NC­ = 2.8×1019 cm-3 and NV­ = 1.0×1019 cm-3, respectively. The electron and hole mobilities at 300 K are

For this multi-part free response question, write down your answer on blank papers.  You have 10 minutes after you have completed this Honorlock exam to scan your handwritten answer (or take photos) and upload into Canvas (responding to the assignment “Exam 2 Supplement”). Make sure you label the individual parts clearly. FRQ#4: Semiconductor p-n junctions  (12 points) An ideal p-n junction is formed between a p-Si and n-Si.  The doping concentrations on the two sides of the junction are ND­ = 2.0×1017 cm-3 and NA­ = 1.0×1016 cm-3. The bandgap of Si is 1.12 eV. The electron affinity of Si is 4.05 eV. (1) Draw the equilibrium band diagram of this p-n junction as accurately as you can. Indicate the space charge region on the diagram. Label the Fermi level (EF), the conduction band edge (EC), and the valence band edge (EV) for both semiconductors. (4 points) (2) Calculate the total amount of band bending in this Si p-n junction when a 0.2 V forward bias is applied. (4 points) (3) For an ideal diode under forward bias, calculate how much the voltage needs to be increased to achieve a 10-fold increase in the current. (4 points)

Which is an advantage of selective serotonin reuptake inhibitors (SSRI) over tricyclic antidepressants (TCA) in the management of depression? Select all that apply.

An athlete comes to you complain of pain within the arch of their foot. They tell you that they have plantar fasciitis. Upon inspection of their current footwear you notice that the shoe is quite worn and suggest that they purchase new shoes to help with their condition. What shoe last would you suggest for them?

Phonons in a crystal have the same range of wavevectors as electrons in the same crystal.

For this multi-part free response question, please write down your answer on blank papers.  You have 10 minutes after you have completed this Honorlock exam to scan your handwritten answer (or take photos) and upload into Canvas (responding to the assignment “Exam 2 Supplement”). Make sure you label the individual parts clearly. FRQ#3. Metal-semiconductor contacts (14 points) A Schottky contact is formed between a metal with a work function of 4.5 eV and a p-Si in which the Fermi level is 0.20 eV away from the nearest band edge. The bandgap of Si is 1.12 eV and the electron affinity of Si is 4.05 eV. (1) Draw the equilibrium band diagram of this metal-semiconductor contact. Label the Fermi energy of both materials and the conduction/valence band edges of p-Si. (4 points) (2) Calculate the built-in potential across this Schottky contact under thermal equilibrium. (3 points) (3) Calculate the Schottky barrier height for hole injection from metal to semiconductor in this Schottky contact. (3 points) (4) Explain why a Schottky contact has a rectifying current behavior under bias. (3 points)  

Ge atoms are acceptors in GaAs if they replace Ga atoms and are donors if they replace As atoms.