You will be required to read and sign this agreement at the…

You will be required to read and sign this agreement at the beginning of each exam.   AND     this HL Pre Exam !   Honor Lock agreement Type:   I ____________   __________________  understand and agree to the rules and policies for using the Honor Lock system.        (insert your name in the blanks) If you do not type an answer,  I will not grade your  Quiz  /  exam.   For the following violations,  I will disallow this HL Pre Exam ,  you lose all 25 points:If you failed to correctly perform any of the required steps / tasks (360o room scan, power off cell phone)Another person in the roomAnother person talking to you from another roomIf you Stop sharing the screen with Honor LockIf you minimize the video screenUse of any electronic device (including: cell phone, Apple watch, headphones, smart watch, ear pods)

Read:  Pre-Exam Review by instructor:  Instructor will revi…

Read:  Pre-Exam Review by instructor:  Instructor will review Honor Lock room scan and check for violations before grading the pre- exam.   If there are any violations,  you will not pass.    — If you fail the room scan for this Pre-exam,  you may request another attempt.   There will be a 5 point deduction for each failed attempt. — You will not have access to Unit 1 exam until you pass the HL Pre-exam. –If you do not pass this Pre exam, what do you need to do? ____________                                                                              

Instructions Answer each of the exam problems shown below o…

Instructions Answer each of the exam problems shown below on your printed answer sheet. Write your answers clearly. For problems 2-5, to receive credit or partial credit, you must show your work. Draw a box around your final answer.  Problem 1 Question 1a (2 points) For a nondegenerate semiconductor, what is the probability that a state in the valence band is empty? 1−f0=e(E−EF)/kBT{“version”:”1.1″,”math”:”\(1-f_0 = e^{(E-E_F)/k_BT}\)”} 1−f0=e(EF−E)/kBT{“version”:”1.1″,”math”:”\(1-f_0 = e^{(E_F-E)/k_BT}\)”} 1−f0=e(EF+E)/kBT{“version”:”1.1″,”math”:”\(1-f_0 = e^{(E_F+E)/k_BT}\)”} 1−f0=e−(EF+E)/kBT{“version”:”1.1″,”math”:”\(1-f_0 = e^{-(E_F+E)/k_BT}\)”} 1−f0=eEF/kBT{“version”:”1.1″,”math”:”\(1-f_0 = e^{E_F/k_BT}\)”} Question 1b (2 points) What is the mathematical statement of space charge neutrality? n=p{“version”:”1.1″,”math”:”\(n = p\)”} n=ND{“version”:”1.1″,”math”:”\(n = {N_D}\)”} n=ND+−NA−{“version”:”1.1″,”math”:”\(n = N_D^ +  – N_A^ – \)”} n+NA−=p+ND+{“version”:”1.1″,”math”:”\(n + N_A^ –  = p + N_D^ + \)”} n+NA−+p+ND+=0{“version”:”1.1″,”math”:”\(n + N_A^ –  + p + N_D^ +  = 0\)”} Question 1c (2 points) Consider Si doped with Boron (NA=1015cm−3,EA−EV=0.045eV){“version”:”1.1″,”math”:”({N_A} = {10^{15}}\;{\rm{c}}{{\rm{m}}^{{\rm{ – 3}}}}, {E_A} – {E_V} = 0.045\;{\rm{eV}})”}. Where is the Fermi level located at T=600K{“version”:”1.1″,”math”:”\(T = 600K\)”}?  (Hint: ni(600K)=4×1015cm−3{“version”:”1.1″,”math”:”\({n_i}\left( {600\;{\rm{K}}} \right) = 4 \times {10^{15}}\;{\rm{c}}{{\rm{m}}^{{\rm{ – 3}}}}\)”}) Near the middle of the band gap. In the upper half of the band gap. In the lower half of the band gap. Below EC{“version”:”1.1″,”math”:”\(E_C\)”} and above ED{“version”:”1.1″,”math”:”\(E_D\)”}. Above EC{“version”:”1.1″,”math”:”\(E_C\)”}. Question 1d (2 points) Which of the following statements describes a semiconductor in the freeze-out region?  ND+ND{“version”:”1.1″,”math”:”\(N_D^ +  > {N_D}\)”} ND+≈ni{“version”:”1.1″,”math”:”\(N_D^ +  \approx {n_i}\)”} ND+≈NC{“version”:”1.1″,”math”:”\(N_D^ +  \approx {N_C}\)”} Question 1e (2 points) What is the Fermi window? The energies for which f1(E)=f2(E)=1{“version”:”1.1″,”math”:”\({f_1}\left( E \right) = {f_2}\left( E \right) = 1\)”}. The energies for which f1(E)=f2(E)=0{“version”:”1.1″,”math”:”\({f_1}\left( E \right) = {f_2}\left( E \right) = 0\)”}. The energies for which f1(E)f2(E){“version”:”1.1″,”math”:”\({f_1}\left( E \right) > {f_2}\left( E \right)\)”}. The energies for which f1(E){“version”:”1.1″,”math”:” \({f_1}\left( E \right)\) “}and f2(E){“version”:”1.1″,”math”:”\({f_2}\left( E \right)\)”} are different. Question 1f (2 points) Particles diffuse down a concentration gradient. What is the force that pushes them down the concentration gradient? A gradient in temperature. A gradient in doping density. A gradient in electrostatic potential. A gradient in particle concentration. There is no force that pushes the particles. Question 1g (2 points) Which of the following corresponds to low level injection in an N-type semiconductor?   (The equilibrium minority hole concentration is p0{“version”:”1.1″,”math”:”\({p_0}\)”} and Δp=p−p0{“version”:”1.1″,”math”:”\(\Delta p = p – {p_0}\)”}  is the excess hole  concentration under nonequilibrium conditions.) Δp>>p0,Δp>>n0{“version”:”1.1″,”math”:”\(\Delta p > > {p_0},\Delta p > > {n_0}\)”} Δp>>p0,Δp