An NMOS transistor fabricated in a 0.13-μm process has L=0.2…

An NMOS transistor fabricated in a 0.13-μm process has L=0.2μm and W=2μm. The process technology has Cox=12.8 fF/μm2, μn=450cm2/V·s, and Vtn=0.4 V. Neglect the channel-length modulation effect. If the transistor is to operate at the edge of the saturation region with ID=100 μA, find the values required of VGS. Provide your answer in volts.

When implementing the PDN of a CMOS circuit that outputs Y t…

When implementing the PDN of a CMOS circuit that outputs Y to realize the equation Y’ = AB + C, the two transistors controlled by the inputs A and C show up in ……… in that PDN? Assume we want to implement the equation with the least number of transistors (i.e. do not try to manipulate the equation).