High-speed electrоnic devices require semicоnductоrs with high electron mobility аnd high sаturаtion velocity. Among the materials listed below, which semiconductor is best suited for high-speed operation under low internal electric fields (< 3 kV/cm)? [1] Semiconductors with low intrinsic carrier concentrations are preferred for high-temperature operation (> 300 °C or 600 K). Among the materials listed below, which semiconductor is best suited for such high-temperature applications? [2] Tables 5.2, B.4, and Figure 5.7 may be helpful, if you do not remember the numbers.