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THIS CONTENT IS PROTECTED AND MAY NOT BE SHARED, UPLOADED, SOLD, OR DISTRIBUTED A cоmpensаted p-type silicоn sаmple hаs backgrоund doping of Nd = [ND] x 1014 cm-3 at T = 300 °K and is doped at Na = [NA] x 1016 cm-3. (a) Determine the position of the Fermi level EF with respect to the intrinsic Fermi level EF - EFi, or EFi – EF (4 pts) (b) When [ec] x 1015 cm-3 excess carriers are generated in steady-state, the Fermi level EF is replaced by the quasi-Fermi levels EFn and EFp. Determine the quasi-Fermi levels EFn and EFp with respect to the intrinsic Fermi level EFi. (3 pts + 3 pts)