For this multi-part free response question, please write dow…
For this multi-part free response question, please write down your answer on blank papers. You have 10 minutes after you have completed this Honorlock exam to scan your handwritten answer (or take photos) and upload into Canvas (responding to the assignment “Exam 2 Supplement”). Make sure you label the individual parts clearly. FRQ#3. Metal-semiconductor contacts (14 points) A Schottky contact is formed between a metal with a work function of 4.5 eV and a p-Si in which the Fermi level is 0.20 eV away from the nearest band edge. The bandgap of Si is 1.12 eV and the electron affinity of Si is 4.05 eV. (1) Draw the equilibrium band diagram of this metal-semiconductor contact. Label the Fermi energy of both materials and the conduction/valence band edges of p-Si. (4 points) (2) Calculate the built-in potential across this Schottky contact under thermal equilibrium. (3 points) (3) Calculate the Schottky barrier height for hole injection from metal to semiconductor in this Schottky contact. (3 points) (4) Explain why a Schottky contact has a rectifying current behavior under bias. (3 points)