For this multi-part free response question, write down your…
For this multi-part free response question, write down your answer on blank papers. You have 10 minutes after you have completed this Honorlock exam to scan your handwritten answer (or take photos) and upload into Canvas (responding to the assignment “Exam 2 Supplement”). Make sure you label the individual parts clearly. FRQ#4: Semiconductor p-n junctions (12 points) An ideal p-n junction is formed between a p-Si and n-Si. The doping concentrations on the two sides of the junction are ND = 2.0×1017 cm-3 and NA = 1.0×1016 cm-3. The bandgap of Si is 1.12 eV. The electron affinity of Si is 4.05 eV. (1) Draw the equilibrium band diagram of this p-n junction as accurately as you can. Indicate the space charge region on the diagram. Label the Fermi level (EF), the conduction band edge (EC), and the valence band edge (EV) for both semiconductors. (4 points) (2) Calculate the total amount of band bending in this Si p-n junction when a 0.2 V forward bias is applied. (4 points) (3) For an ideal diode under forward bias, calculate how much the voltage needs to be increased to achieve a 10-fold increase in the current. (4 points)