For this multi-part free response question, write down your…
For this multi-part free response question, write down your answer on blank papers. You have 10 minutes after you have completed this Honorlock exam to scan your handwritten answer (or take photos) and upload into Canvas (responding to the assignment “Exam 2 Supplement”). Make sure you label the individual parts clearly. FRQ#5: MOSFETs (8 points) (1) Schematically draw the cross-section structure of a p-channel MOSFET, label all three electrodes (source, drain, and gate) and the oxide and semiconductor (including the doping types), and indicate the location of the conducting channel. (4 points) (2) For a MOSFET built on an n-type Si semiconductor in which the Fermi energy is 0.3 eV away from the nearest band edge, where is the Fermi energy position (relative to the band edges) on the surface of the semiconductor when the MOSFET is just turned on (i.e. the gate voltage equals the threshold voltage of the MOSFET)? Use 1.1 eV for the bandgap of Si. (4 points)