Question 3: (25 points) Consider a uniformly doped silicon p…
Question 3: (25 points) Consider a uniformly doped silicon pn junction with doping concentrations Na = 5×1015 cm–3 and Nd = 1×1016 cm–3. Determine: Vbi at T = 300 K. (5 points) xn at zero bias V = 0 V. (7 points) xn at reverse bias VR = 2 V. (5 points) The junction capacitance if the junction area is 1×10–4 cm2 and at zero bias V = 0 V and at reverse bias VR = 2 V. (8 points) e = 1.60×10–19 C, k = 8.62×10–5 eV/K, ni = 1.5×1010 cm–3 at 300 K,