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Notice: Function _load_textdomain_just_in_time was called incorrectly. Translation loading for the wck domain was triggered too early. This is usually an indicator for some code in the plugin or theme running too early. Translations should be loaded at the init action or later. Please see Debugging in WordPress for more information. (This message was added in version 6.7.0.) in /home/forge/wikicram.com/wp-includes/functions.php on line 6121 The following are true regarding bisphosphonates: … | Wiki CramSkip to main navigationSkip to main contentSkip to footer
The following are true regarding bisphosphonates: …
The following are true regarding bisphosphonates: 1. Absorption after oral administration is poor.2. They are the first-line treatment for only postmenopausal women with osteoporosis.3. They are all dosed weekly.4. They are safe to use in patients with severe renal impairment. 5. They increase osteoclastic bone resorption.
The following are true regarding bisphosphonates: …
Questions
The fоllоwing аre true regаrding bisphоsphonаtes: 1. Absorption after oral administration is poor.2. They are the first-line treatment for only postmenopausal women with osteoporosis.3. They are all dosed weekly.4. They are safe to use in patients with severe renal impairment. 5. They increase osteoclastic bone resorption.
Instructiоns Answer eаch оf the exаm prоblems shown below on your printed аnswer sheet. Write your answers clearly. For problems 2-5, to receive credit or partial credit, you must show your work. Draw a box around your final answer. Problem 1 Question 1a (2 points) For a nondegenerate semiconductor, what is the probability that a state in the valence band is empty? 1−f0=e(E−EF)/kBT{"version":"1.1","math":"(1-f_0 = e^{(E-E_F)/k_BT})"} 1−f0=e(EF−E)/kBT{"version":"1.1","math":"(1-f_0 = e^{(E_F-E)/k_BT})"} 1−f0=e(EF+E)/kBT{"version":"1.1","math":"(1-f_0 = e^{(E_F+E)/k_BT})"} 1−f0=e−(EF+E)/kBT{"version":"1.1","math":"(1-f_0 = e^{-(E_F+E)/k_BT})"} 1−f0=eEF/kBT{"version":"1.1","math":"(1-f_0 = e^{E_F/k_BT})"} Question 1b (2 points) What is the mathematical statement of space charge neutrality? n=p{"version":"1.1","math":"(n = p)"} n=ND{"version":"1.1","math":"(n = {N_D})"} n=ND+−NA−{"version":"1.1","math":"(n = N_D^ + - N_A^ - )"} n+NA−=p+ND+{"version":"1.1","math":"(n + N_A^ - = p + N_D^ + )"} n+NA−+p+ND+=0{"version":"1.1","math":"(n + N_A^ - + p + N_D^ + = 0)"} Question 1c (2 points) Consider Si doped with Boron (NA=1015cm−3,EA−EV=0.045eV){"version":"1.1","math":"({N_A} = {10^{15}};{rm{c}}{{rm{m}}^{{rm{ - 3}}}}, {E_A} - {E_V} = 0.045;{rm{eV}})"}. Where is the Fermi level located at T=600K{"version":"1.1","math":"(T = 600K)"}? (Hint: ni(600K)=4×1015cm−3{"version":"1.1","math":"({n_i}left( {600;{rm{K}}} right) = 4 times {10^{15}};{rm{c}}{{rm{m}}^{{rm{ - 3}}}})"}) Near the middle of the band gap. In the upper half of the band gap. In the lower half of the band gap. Below EC{"version":"1.1","math":"(E_C)"} and above ED{"version":"1.1","math":"(E_D)"}. Above EC{"version":"1.1","math":"(E_C)"}. Question 1d (2 points) Which of the following statements describes a semiconductor in the freeze-out region? ND+ND{"version":"1.1","math":"(N_D^ + > {N_D})"} ND+≈ni{"version":"1.1","math":"(N_D^ + approx {n_i})"} ND+≈NC{"version":"1.1","math":"(N_D^ + approx {N_C})"} Question 1e (2 points) What is the Fermi window? The energies for which f1(E)=f2(E)=1{"version":"1.1","math":"({f_1}left( E right) = {f_2}left( E right) = 1)"}. The energies for which f1(E)=f2(E)=0{"version":"1.1","math":"({f_1}left( E right) = {f_2}left( E right) = 0)"}. The energies for which f1(E)f2(E){"version":"1.1","math":"({f_1}left( E right) > {f_2}left( E right))"}. The energies for which f1(E){"version":"1.1","math":" ({f_1}left( E right)) "}and f2(E){"version":"1.1","math":"({f_2}left( E right))"} are different. Question 1f (2 points) Particles diffuse down a concentration gradient. What is the force that pushes them down the concentration gradient? A gradient in temperature. A gradient in doping density. A gradient in electrostatic potential. A gradient in particle concentration. There is no force that pushes the particles. Question 1g (2 points) Which of the following corresponds to low level injection in an N-type semiconductor? (The equilibrium minority hole concentration is p0{"version":"1.1","math":"({p_0})"} and Δp=p−p0{"version":"1.1","math":"(Delta p = p - {p_0})"} is the excess hole concentration under nonequilibrium conditions.) Δp>>p0,Δp>>n0{"version":"1.1","math":"(Delta p > > {p_0},Delta p > > {n_0})"} Δp>>p0,Δp